Téléchargeur: Matthew
Pays: Finland
Temps de chargement: Aug 16, 2018
Prix: Gratuit
Évaluation: Basé sur 1 utilisateurs

S'il vous plaît, vérifiez que vous n'êtes pas un robot pour charger le reste des pages

tÉlÉcharger k2996 mosfet pdf

2SK2996
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2996
DC−DC Converter, Relay Drive and Motor Drive
Applications
z Low drain−source ON resistance
Unit: mm
: RDS (ON) = 0.74 Ω (typ.)
z High forward transfer admittance
z Low leakage current
: |Yfs| = 6.8 S (typ.)
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
600
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
10
Pulse (Note 1)
IDP
30
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
252
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
A
JEDEC

JEITA
TOSHIBA
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.78
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.41 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29
2SK2996
Electrical Characteristics (Ta = 25°C)
Characteristics