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tÉlÉcharger j112 datasheet pdf

J111, J112
JFET Chopper Transistors
N−Channel — Depletion
Features
• Pb−Free Packages are Available*
http://onsemi.com
1 DRAIN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Gate Voltage
VDG
−35
Vdc
Gate −Source Voltage
VGS
−35
Vdc
Gate Current
IG
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
PD
350
2.8
mW
mW/°C
Lead Temperature
TL
300
°C
TJ, Tstg
−65 to +150
°C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
GATE
2 SOURCE
TO−92
CASE 29−11
STYLE 5
1
2
3
MARKING DIAGRAM
J11x
AYWW G
G
J11x = Device Code
x = 1 or 2
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
J111/D
J111, J112
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
35

Vdc
IGSS

− 1.0
nAdc
− 3.0
− 1.0
− 10
− 5.0

1.0