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BDW93C
BDW94B/BDW94C
®
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS



STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT

3
1
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
NPN
PNP
Unit
BDW93C
BDW94B
BDW94C
V CBO
Collector-Base Voltage (I E = 0)
80
100
V
V CEO
Collector-Emitter Voltage (I B = 0)
80
100
V
IC
ICM
IB
P tot
Tstg
Tj
Collector Current
12
A
Collector Peak Current
15
A
Base Current
0.2
A
80
W
Total Dissipation at T c ≤ 25 C
Storage Temperature
o
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
October 1999
1/6
BDW93C/BDW94B/BDW94C
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
o
1.56
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO
Parameter
Collector Cut-off
Current (I E = 0)
Test Conditions
Typ.
Max.
Unit
for BDW94B