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tÉlÉcharger bd250c pdf

BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS

Designed for Complementary Use with the
BD249 Series

125 W at 25°C Case Temperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
This model is currently available, but not
recommended for new designs. For more
information, see http://bourns.com/data/
global/pdfs/TSP1203_SOT93_POM.pdf.
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-emitter voltage (RBE = 100 Ω)
Collector-emitter voltage (IC = -30 mA)
BD250B
VCER
-115
-45
BD250B
V CEO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
-90
BD250C
-60
V
-80
-100
BD250C
Emitter-base voltage
-70
BD250
BD250A
UNIT
-55
BD250
BD250A
VALUE
VEBO
-5
V
IC
-25
A
ICM
-40
A
IB
-5
A
Ptot
125
W
Ptot
3
W
½LIC2
90
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
250
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.