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BD136 / BD138 / BD140
PNP Epitaxial Silicon Transistor
Features
• Complement to BD135, BD137 and BD139 respectively
Applications
• Medium Power Linear and Switching
1
1. Emitter
TO-126
2.Collector
3.Base
Ordering Information
Part Number
Marking
Package
Packing Method
BD13610S
BD136-10
TO-126 3L
Bulk
BD13610STU
BD136-10
TO-126 3L
Rail
BD13616S
BD136-16
TO-126 3L
Bulk
BD13616STU
BD136-16
TO-126 3L
Rail
BD13810STU
BD138-10
TO-126 3L
Rail
BD13816STU
BD138-16
TO-126 3L
Rail
BD14010STU
BD140-10
TO-126 3L
Rail
BD14016S
BD140-16
TO-126 3L
Bulk
BD14016STU
BD140-16
TO-126 3L
Rail
© 2000 Fairchild Semiconductor Corporation
BD136 / BD138 / BD140 Rev. 2.2
www.fairchildsemi.com
BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor
March 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
Parameter
Value
Collector-Base Voltage
Collector-Emitter Voltage
BD136
-45
BD138
-60
BD140
-80
BD136
-45
BD138
-60
BD140
-80
Unit
V
V
VEBO
Emitter-Base Voltage
-5
V
IC