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BC182L
BC182L
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 10.
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
50
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
100
mA
TJ, TSTG
Storage Junction Temperature Range
- 55 ~ 150
°C
- Continuous
Units
V
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage
Test Condition
Min.
Typ.
Max.
Units
IC = 2mA, IB = 0
50
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
60
V
6
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
ICBO
Collector Cut-off Current
VCB = 50V, VBE = 0
15
nA
IEBO
Emitter-Base Leakage Current
VEB = 4V, IE = 0
15
nA
On Characteristics
hFE
DC Current Gain
VCE(sat)
VCE = 5V, IC = 10µA
VCE = 5V, IC = 2mA
VCE = 5V, IC = 100mA
40
120
80
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 100mA, IB = 5mA
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 2mA