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tÉlÉcharger 2ty smd transistor pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
S8550
TRANSISTOR (PNP)
1. BASE
FEATURES
z
Complimentary to S8050
2. EMITTER
3. COLLECTOR
Collector current: IC=0.5A
z
MARKING :
2TY
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.5
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150

Tstg
Storage Temperature
-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC = -100μA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =-1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40V, IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE= -20V, IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -3V, IC=0
-0.1
μA
400
hFE(1)
VCE= -1V, IC= -50mA
120
hFE(2)
VCE= -1V, IC= -500mA
50
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB= -50mA