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D209L
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
TO-3P
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
VBE = 0
700
V
VCEO
Collector-Emitter Voltage
IB = 0
400
V
VEBO
Emitter-Base Voltage
IC = 0
9.0
V
IC
Collector Current
12
A
ICP
Collector pulse Current
25
A
IB
Base Current
IBM
Base Peak Current
PC
tP = 5ms
6.0
A
12
A
Total Dissipation at Tc = 25℃
130
Total Dissipation at Ta= 25℃
2.3
W
TJ
Operation Junction Temperature
- 40 ~ 150

TSTG
Storage Temperature
- 40 ~ 150

Value
0.96
Units
℃/W
40
℃/W
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
RθJc
Parameter
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Jan 2009. Rev. 0
1/5
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
D209L
Electrical Characteristics (TC=25℃
unless otherwise noted)
Value
Symbol
Parameter
VCEO(sus)
Collector-Emitter Breakdown Voltage
Test Conditions
Ic=10mA,Ib=0
Min
Typ
Max
400
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
-