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2N5416
PNP High Voltage Transistors
Features:
• PNP Silicon High Voltage Transistor.
• High speed switching and linear amplifier appliances in Military, Industrial and
Commercial Equipment.
TO-39 Metal Can Package
Dimensions
Minimum
Maximum
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Dimensions : Millimetres
Pin Configuration
1. Emitter
2. Base
3. Collector
Page 1
31/05/05 V1.0
2N5416
PNP High Voltage Transistors
Absolute Maximum Rating ( Ta = 25°C unless specified otherwise)
Description
Symbol
2N5416
Collector Emitter Voltage
VCEO
300
Collector Base Voltage
VCBO
350
Emitter Base Voltage
VEBO
6
Collector Current Continuous
IC
1
Base Current Continuous
IB
0.5
Units
V
A
Power Dissipation at Ta = 50°C
Derate above 25°C
1
W
mW/°C
10
W
200
mW/°C
PD
Power Dissipation at TC = 25°C
Derate above 25°C
Junction Temperature
Tj
Operating and Storage Junction
Temperature Range
Tstg
-65 to +200
°C
Thermal Resistance
Junction to Ambient
Rth(j-a)
Junction to Case
Rth(j-c)
150
°C/W